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| 基本信息 | 登录收藏 | |||||||||||||||||||||
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期刊名字 | IEEE ELECTRON DEVICE LETTERS IEEE ELECTR DEVICE L （此期刊被最新的JCR期刊SCIE收录） LetPub评分 8.2
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声誉 8.7 影响力 7.7 速度 8.7 | |||||||||||||||||||||
| 期刊ISSN | 0741-3106 | 安装APP，查看期刊最新消息
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| E-ISSN | 1558-0563 | |||||||||||||||||||||
| 2025-2026最新IF （数据来源于网友提供） | 注册或登录后，查看IF | |||||||||||||||||||||
| 实时影响因子 | 截止2026年9月20日：2.745 | |||||||||||||||||||||
| 2025-2026自引率 | 10.9%点击查看自引率趋势图 | |||||||||||||||||||||
| 五年IF （数据来源于网友提供） | 4.704数据由网友[宅女4319]收集提供 | |||||||||||||||||||||
| h-index | 135 | |||||||||||||||||||||
| CiteScore （ 2026年6月最新版） |
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| 期刊简介 |
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| 期刊官方网站 | http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | |||||||||||||||||||||
期刊投稿格式模板 VIP专享 |
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| 期刊投稿网址 | http://mc.manuscriptcentral.com/edl | |||||||||||||||||||||
| 该期刊中国学者近期发文 - New | CMP-Free Organic Hybrid Bonding Based on Mechanical Interlock Structure via Surface Treatments for 3-D Integration Author: Li, Jinzhu; Lou, Qicun; Wang, Xinyao; Ban, Mingze; Wang, Wenchao; Liu, Ziyu; Zhu, Hao; Sun, Qingqing; Chen, Lin; Sun, Yabin; Zhang, David Wei Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1623-1626. DOI: 10.1109/LED.2026.3704582 All-ALD Sequential Monolithic Integration of Selector-Free Five-Layer Ferroelectric Diodes for 3-D Cross-Point Memory Author: Zhou, Wenjuan; Yan, Ruizhan; Xue, Renhao; Chan, Mansun; Liu, Xiwen Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1663-1666. DOI: 10.1109/LED.2026.3704279 The Ballistic Injection in IGZO GAA VFET With Scaled Source/Drain Extension and Its Impact on On-Current Enhancement Author: Zheng, Liankai; Wang, Ziheng; Lin, Zhiyu; Si, Mengwei Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1587-1590. DOI: 10.1109/LED.2026.3706796 Rectangular Four-Level Stacked SiGe Nanosheet GAA Transistors Based on Si/SiGe Stacks Enabled by a Novel SGI-TMAH Channel Release Process Author: Zhao, Fei; Jia, Xiaofeng; Xiao, Xingrong; Xu, Jiahe; Ma, Pengzhe; Luo, Huaizhi; Liu, Haoyan; Zhang, Yongkui; Li, Yongliang Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1519-1522. DOI: 10.1109/LED.2026.3704883 | |||||||||||||||||||||
| 期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件，不仅能满足IEEE ELECTRON DEVICE LETTERS的语言要求，还能让IEEE ELECTRON DEVICE LETTERS编辑和审稿人得到更好的审稿体验，让稿件最大限度地被IEEE ELECTRON DEVICE LETTERS编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务（包括SCI论文英语润色，同行资深专家修改润色，SCI论文专业翻译，SCI论文格式排版，专业学术制图等）帮助作者准备稿件，已助力全球15万+作者顺利发表论文。部分发表范例可查看：服务好评 论文致谢（1篇） 。
提交文稿 | |||||||||||||||||||||
| 是否OA开放访问 | No | |||||||||||||||||||||
| 通讯方式 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||
| 出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||
| 涉及的研究方向 | 工程技术-工程：电子与电气 | |||||||||||||||||||||
| 出版国家或地区 | UNITED STATES | |||||||||||||||||||||
| 出版语言 | English | |||||||||||||||||||||
| 出版周期 | Monthly | |||||||||||||||||||||
| 出版年份 | 1980 | |||||||||||||||||||||
| 年文章数 | 550点击查看年文章数趋势图 | |||||||||||||||||||||
| Gold OA文章占比 | 2.21% | |||||||||||||||||||||
| 研究类文章占比： 文章 ÷（文章 + 综述） | 100.00% | |||||||||||||||||||||
| WOS期刊JCR分区 （ 2025-2026年最新版） | 注册或登录后，查看WOS分区等级 | |||||||||||||||||||||
| 期刊分区表预警名单 | 2026年03月发布的新锐学术版：不在预警名单中 2025年03月发布的2025版：不在预警名单中 2024年02月发布的2024版：不在预警名单中 2023年01月发布的2023版：不在预警名单中 2021年12月发布的2021版：不在预警名单中 2020年12月发布的2020版：不在预警名单中 | |||||||||||||||||||||
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| 《新锐期刊分区表》 （ 2026年3月发布） | 点击查看期刊分区表趋势图
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| 期刊分区表 （ 2025年3月升级版） |
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| 期刊分区表 （ 2023年12月旧的升级版） |
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| SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月，原SCI撤销合并入SCIE，统称SCIE) Scopus (CiteScore) | |||||||||||||||||||||
| PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=0741-3106%5BISSN%5D | |||||||||||||||||||||
| 平均审稿速度 | 网友分享经验： 平均1.3个月 | |||||||||||||||||||||
| 平均录用比例 | 网友分享经验： 约25% | |||||||||||||||||||||
| APC文章处理费信息 | 版面费：平均 660 元/页 | |||||||||||||||||||||
| LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍，平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务（包括SCI论文英语润色，同行资深专家修改润色，SCI论文专业翻译，SCI论文格式排版，专业学术制图等）后论文在IEEE ELECTRON DEVICE LETTERS顺利发表。
快看看作者怎么说吧：服务好评 论文致谢（1篇） 。 提交文稿 | |||||||||||||||||||||
| 期刊常用信息链接 |
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| 中国学者近期发表的论文 | |
| 1. | CMP-Free Organic Hybrid Bonding Based on Mechanical Interlock Structure via Surface Treatments for 3-D Integration Author: Li, Jinzhu; Lou, Qicun; Wang, Xinyao; Ban, Mingze; Wang, Wenchao; Liu, Ziyu; Zhu, Hao; Sun, Qingqing; Chen, Lin; Sun, Yabin; Zhang, David Wei Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1623-1626. DOI: 10.1109/LED.2026.3704582 DOI |
| 2. | All-ALD Sequential Monolithic Integration of Selector-Free Five-Layer Ferroelectric Diodes for 3-D Cross-Point Memory Author: Zhou, Wenjuan; Yan, Ruizhan; Xue, Renhao; Chan, Mansun; Liu, Xiwen Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1663-1666. DOI: 10.1109/LED.2026.3704279 DOI |
| 3. | The Ballistic Injection in IGZO GAA VFET With Scaled Source/Drain Extension and Its Impact on On-Current Enhancement Author: Zheng, Liankai; Wang, Ziheng; Lin, Zhiyu; Si, Mengwei Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1587-1590. DOI: 10.1109/LED.2026.3706796 DOI |
| 4. | Rectangular Four-Level Stacked SiGe Nanosheet GAA Transistors Based on Si/SiGe Stacks Enabled by a Novel SGI-TMAH Channel Release Process Author: Zhao, Fei; Jia, Xiaofeng; Xiao, Xingrong; Xu, Jiahe; Ma, Pengzhe; Luo, Huaizhi; Liu, Haoyan; Zhang, Yongkui; Li, Yongliang Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1519-1522. DOI: 10.1109/LED.2026.3704883 DOI |
| 5. | Role of Interlayer and Interfacial Traps in Endurance Degradation of FeFETs Author: Zhang, Zuowei; Huang, Yuanquan; Chai, Junshuai; Wang, Xiaolei; Wu, Zhicheng; Gong, Tiancheng; Luo, Qing Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1555-1558. DOI: 10.1109/LED.2026.3706090 DOI |
| 6. | Vertical Integration of Noncarrier Injection Nano-LEDs and Transistors With Controllable Bandwidth for Selective Driving of Parallel Arrays: Modeling and Simulation Author: Zhang, Shuqian; Li, Wenhao; Lin, Shixiong; Zhou, Xiongtu; Zhang, Yongai; Guo, Tailiang; Wu, Chaoxing Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1615-1618. DOI: 10.1109/LED.2026.3701402 DOI |
| 7. | Power Gain-Stable AlN/GaN MIS-HEMTs With Pulsed N2 Plasma-Treated In-Situ SiNx Gate Dielectric Author: Zhang, Qingyi; Wei, Ke; Wang, Jianchao; Zhang, Sheng; Wang, Kaiyu; Guo, Jiaqi; He, Xiaoqiang; Ma, Zhuanli; Feng, Junjie; Fan, Shibo; Gao, Xinguo; Li, Yankui; Huang, Sen; Wang, Xinhua; Liu, Xinyu Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1539-1542. DOI: 10.1109/LED.2026.3703504 DOI |
| 8. | 600 V/1 A Enhancement-Mode β-Ga2O3 MOSFETs With Graded Doping Engineering Author: Yue, Hongqing; Wang, Chenlu; Zhou, Hong; Zhao, Jianghan; Hao, Yue; Zhang, Jincheng Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1535-1538. DOI: 10.1109/LED.2026.3701514 DOI |
| 9. | Double-Sided Funnel-Shaped Through Silicon Via Interposer by Wet-Etching Method for Superconducting Quantum Application Author: Yu, Jiexun; Wu, Yongbo; Wang, Qian; Song, Changming; Mao, Kaixiang; Cai, Jian Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1651-1654. DOI: 10.1109/LED.2026.3703907 DOI |
| 10. | Experiment Demonstration of Hybrid-Orientation Sequential CFET Boosting Hole Mobility Author: Yang, Kun; Wang, Zhongrui; Xie, Zhongshan; Zhang, Hang; Yan, Mingzhu; Li, Junjie; Pan, Yanyi; Ren, Yingze; Lu, Yupeng; Liu, Jinbiao; Zhang, Meihe; Zhang, Yadong; Cao, Lei; Zhang, Qingzhu; Li, Junfeng; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun Journal: IEEE ELECTRON DEVICE LETTERS. 2026; Vol. 47, Issue 8, pp. 1527-1530. DOI: 10.1109/LED.2026.3702148 DOI |
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