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期刊名字![]() | IEEE Journal of the Electron Devices Society IEEE J ELECTRON DEVI (此期刊被最新的JCR期刊SCIE收录) LetPub评分 6.3
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声誉 7.1 影响力 5.0 速度 9.4 | |||||||||||||||||||||||||
| 期刊ISSN | 2168-6734 | 安装APP,查看期刊最新消息
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| 2025-2026最新IF (数据来源于网友提供) | 注册或登录后,查看IF | |||||||||||||||||||||||||
| 实时影响因子 | 截止2026年9月20日:1.732 | |||||||||||||||||||||||||
| 2025-2026自引率 | 3.4%点击查看自引率趋势图 | |||||||||||||||||||||||||
| 五年IF (数据来源于网友提供) | 2.705数据由网友[cloudy雪18]收集提供 | |||||||||||||||||||||||||
| h-index | 23 | |||||||||||||||||||||||||
| CiteScore ( 2026年6月最新版) |
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| 期刊简介 |
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| 期刊官方网站 | https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494 | |||||||||||||||||||||||||
期刊投稿格式模板 VIP专享 |
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| 期刊投稿网址 | http://mc.manuscriptcentral.com/jeds | |||||||||||||||||||||||||
| 该期刊中国学者近期发文 - New | Landau-Khalatnikov-Based Modeling and Design Methodology for 1T-1FeFET Ferroelectric Neuron Oscillators Author: Zeng, Xiangkai; Yan, Zhao-Yi; Liu, Houfang; Liu, Haitao; Zhao, Ruiting; Huang, Dapeng; Wang, Lin-Wang; Yang, Yi; Ren, Tian-Ling Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 507-515. DOI: 10.1109/JEDS.2026.3713657 Bridging Semiconductor Technology and Deep Learning Models: From Architectures to Domain-Specific Challenges Author: Luo, Man; Zhou, Yang; Jiao, Wenbo; Ma, Yi; Xu, Jintong; Yu, Chenhui Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 525-536. DOI: 10.1109/JEDS.2026.3717559 Ge-on-Si Photodetector With Broadband Spectral Response and High Gain Author: Zhou, Zhou; Gao, Chao; Zheng, Zequn; Jin, Xin; Liu, Xiaolin; Qi, Yihong; Wang, Kai Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 686-693. DOI: 10.1109/JEDS.2026.3674330 Demonstration Highly Scalability of Ultra-Thin EOT HfO2-ZrO2-HfO2 Gate Stacks With 25 nm Lg FinFET for Advanced CMOS Technology Author: Zhong, Kun; Zhang, Zhaohao; Liu, Siyuan; Lyu, Haiyuan; Li, Junfeng; Yin, Huaxiang Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 614-620. DOI: 10.1109/JEDS.2025.3603648 | |||||||||||||||||||||||||
| 期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE Journal of the Electron Devices Society的语言要求,还能让IEEE Journal of the Electron Devices Society编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE Journal of the Electron Devices Society编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。
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| 是否OA开放访问 | Yes | |||||||||||||||||||||||||
OA期刊相关信息![]() | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 期刊主题关键词:field effect transistors、logic gates、integrated circuit devices、display technologies、wearable devices 相关链接:Aims & ScopeAuthor InstructionsEditorial BoardAnonymous peer review | |||||||||||||||||||||||||
| 通讯方式 | 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||||||
| 出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||||||
| 涉及的研究方向 | Biochemistry, Genetics and Molecular Biology-Biotechnology | |||||||||||||||||||||||||
| 出版国家或地区 | UNITED STATES | |||||||||||||||||||||||||
| 出版语言 | English | |||||||||||||||||||||||||
| 出版周期 | ||||||||||||||||||||||||||
| 出版年份 | 0 | |||||||||||||||||||||||||
| 年文章数 | 179点击查看年文章数趋势图 | |||||||||||||||||||||||||
| Gold OA文章占比 | 100.00% | |||||||||||||||||||||||||
| 研究类文章占比: 文章 ÷(文章 + 综述) | 100.00% | |||||||||||||||||||||||||
| WOS期刊JCR分区 ( 2025-2026年最新版) | 注册或登录后,查看WOS分区等级 | |||||||||||||||||||||||||
| 期刊分区表预警名单 | 2026年03月发布的新锐学术版:不在预警名单中 2025年03月发布的2025版:不在预警名单中 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||
| 《新锐期刊分区表》 ( 2026年3月发布) | 点击查看期刊分区表趋势图
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| 期刊分区表 ( 2025年3月升级版) |
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| 期刊分区表 ( 2023年12月旧的升级版) |
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| SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) Directory of Open Access Journals (DOAJ) | |||||||||||||||||||||||||
| PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=2168-6734%5BISSN%5D | |||||||||||||||||||||||||
| 平均审稿速度 | 网友分享经验: 9 Weeks | |||||||||||||||||||||||||
| 平均录用比例 | 网友分享经验: | |||||||||||||||||||||||||
| 版面费/APC文章处理费信息 | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 LetPub提供文章处理费(APC)支持服务,可以用人民币支付版面费啦! | |||||||||||||||||||||||||
| LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在IEEE Journal of the Electron Devices Society顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 。 提交文稿 | |||||||||||||||||||||||||
| 期刊常用信息链接 | ||||||||||||||||||||||||||
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| 中国学者近期发表的论文 | |
| 1. | Landau-Khalatnikov-Based Modeling and Design Methodology for 1T-1FeFET Ferroelectric Neuron Oscillators Author: Zeng, Xiangkai; Yan, Zhao-Yi; Liu, Houfang; Liu, Haitao; Zhao, Ruiting; Huang, Dapeng; Wang, Lin-Wang; Yang, Yi; Ren, Tian-Ling Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 507-515. DOI: 10.1109/JEDS.2026.3713657 DOI |
| 2. | Bridging Semiconductor Technology and Deep Learning Models: From Architectures to Domain-Specific Challenges Author: Luo, Man; Zhou, Yang; Jiao, Wenbo; Ma, Yi; Xu, Jintong; Yu, Chenhui Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 525-536. DOI: 10.1109/JEDS.2026.3717559 DOI |
| 3. | Ge-on-Si Photodetector With Broadband Spectral Response and High Gain Author: Zhou, Zhou; Gao, Chao; Zheng, Zequn; Jin, Xin; Liu, Xiaolin; Qi, Yihong; Wang, Kai Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 686-693. DOI: 10.1109/JEDS.2026.3674330 DOI |
| 4. | Demonstration Highly Scalability of Ultra-Thin EOT HfO2-ZrO2-HfO2 Gate Stacks With 25 nm Lg FinFET for Advanced CMOS Technology Author: Zhong, Kun; Zhang, Zhaohao; Liu, Siyuan; Lyu, Haiyuan; Li, Junfeng; Yin, Huaxiang Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 614-620. DOI: 10.1109/JEDS.2025.3603648 DOI |
| 5. | Efficient Routing Congestion Prediction in Chip Design: Integrating Netlist Structure and Design Specifications With Heterogeneous Graph Attention Networks Author: Yang, Qingyuan; Xu, Mingkun; Li, Hongyi; Du, Yu; Feng, Dahu; Zhao, Rong Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 640-647. DOI: 10.1109/JEDS.2025.3597971 DOI |
| 6. | Experiment Investigation of La2O3 Dipole-Last Cap-Less VFB Tuning Technology With Low-Thermal Post Deposition Anneal Author: Wang, Yu; Yao, Jiaxin; Wei, Yanzhao; Zhang, Qingzhu; Yin, Huaxiang Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 546-552. DOI: 10.1109/JEDS.2025.3637894 DOI |
| 7. | Performance Enhancement of Schottky Barrier MOSFET by Laser-Induced Low Temperature Dopant Segregation for Monolithic-3D Integration Author: Wang, Feixiong; Zhang, Yadong; Liu, Jinbiao; Liu, Shuang; Bao, Yunjiao; Mao, Shujuan; Ding, Mingzheng; Zhang, Zhaohao; Yao, Jiaxin; Zhang, Qingzhu; Yin, Huaxiang Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 621-627. DOI: 10.1109/JEDS.2025.3602898 DOI |
| 8. | A Novel Hybrid-Collector Tunneling IGBT With Enhanced Operating Temperature Author: Wang, Chang-Hao; Chen, Xin-Ru; Guo, Jian-Bin; Sun, Qing-Qing; Zhang, David Wei; Xu, Hang Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 648-653. DOI: 10.1109/JEDS.2025.3579146 DOI |
| 9. | Impact of TiN Thickness Uniformity on the Reliability of n-FinFETs Author: Sun, Mingyang; Shi, Yunfei; Yang, Hong; Li, Qingyuan; Liu, Qianqian; Zhang, Qingzhu; Tang, Bo; Yang, Tao; Li, Junfeng; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 601-605. DOI: 10.1109/JEDS.2025.3612160 DOI |
| 10. | Sub-0.1/h Bias Instability Achieved in Mode-Matched MEMS Gyroscopes Through Self-Clocking Author: Liu, Xuewen; Bi, Junjie; Chen, Guangyang; Ding, Xukai; Li, Hongsheng Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 628-639. DOI: 10.1109/JEDS.2025.3588165 DOI |
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